FX6ASJ-03_06 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – High-Speed Switching Use Pch Power MOS FET

FX6ASJ-03
Performance Curves
Drain Power Dissipation Derating Curve
40
32
24
16
8
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–10
VGS = –10V
– 8V
–8
– 7V
– 6V
Tc = 25°C
Pulse Test
– 5V
–6
PD = 20W
–4
– 4V
–2
0
0
– 3V
–1.0 – 2.0 – 3.0 – 4.0 – 5.0
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
– 5.0
Tc = 25°C
Pulse Test
– 4.0
– 3.0
ID = –10A
– 2.0
– 6A
–1.0
– 3A
– 1A
0
0 – 2 – 4 – 6 – 8 –10
Gate-Source Voltage V_GS (V)
Rev.2.00 Nov 21, 2006 page 3 of 6
Maximum Safe Operating Area
–10²
–7
–5
–3
–2
tw = 10µs
–10¹
–7
–5
–3
–2
100µs
1ms
–10⁰
–7
–5
10ms
DC
–3 _{Tc = 25°C}
–2 _{Single Pulse}
–10^–1
–2 –3 –5 –7–10⁰–2 –3 –5 –7–10¹ –2 –3 –5 –7–10² –2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
– 5.0
Tc = 25°C
Pulse Test
– 4.0 V_GS = –10V
– 8V
–3.0
– 7V
– 6V
– 5V
– 4V
–2.0
–1.0
– 3V
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
1.0
Tc = 25°C
Pulse Test
0.8
0.6
VGS = – 4V
0.4
–10V
0.2
0
–10^–1 –2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10²
Drain Current I_D (A)