BB504M_11 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

BB504M
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs. Gate1 Voltage
20
V_DS = 5 V
16 ^{RG = 120 kΩ}
4V
12
3V
2V
8
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Power Gain vs. Gate Resistance
40
35
30
25
20
V_DS = 5 V
15
V_G1 = 5 V
V_G2S = 4 V
f = 200 MHz
10
10 20 50
100 200
500 1000
Gate Resistance R_G (kΩ)
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
Preliminary
Typical Output Characteristics
20
V_G2S = 4 V
V_G1 = V_DS
16
12
8
180
220
k^Ω
k^Ω
4
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
24
R_G = 120 kΩ
f = 1 kHz
4V
3V
18
2V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Noise Figure vs. Gate Resistance
4
V_DS = 5 V
V_G1 = 5 V
3
V_G2S = 4 V
f = 200MHz
2
1
0
10 20
50 100 200 500 1000
Gate Resistance R_G (kΩ)
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