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| BB504M_11 Datasheet, PDF (3/10 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier | |||
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BB504M
Preliminary
Test Circuits
⢠DC Biasing Circuit for Operating Characteristics Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
Gate 2
RG
VG1
Gate 1
Drain
A
ID
Source
⢠200 MHz Power Gain, Noise Figure Test Circuit
VT
1000p
VG2
1000p
VT
1000p
Input(50Ω)
1000p
1000p 47k
47k
BBFET
L1
36p
1000p
1SV70
RG
120k
47k
L2
1000p
Output(50Ω)
10p max
RFC
1SV70
1000p
VD = VG1
L1 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : Φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
Unit Resistance (Ω)
Capacitance (F)
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
Page 3 of 9
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