BB504M_11 Datasheet, PDF (2/10 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

BB504M
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain (1)
Noise figure (1)
Power gain (2)
Noise figure (2)
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V_(BR)DSS
6
—
—
V
I_D = 200 μA, V_G1S = V_G2S = 0
V_(BR)G1SS
+6
—
—
V
I_G1 = +10 μA, V_G2S = V_DS = 0
V_(BR)G2SS
+6
—
—
V
I_G2 = +10 μA, V_G1S = V_DS = 0
I_G1SS
—
—
+100
nA V_G1S = +5 V, V_G2S = V_DS = 0
I_G2SS
—
—
+100
nA V_G2S = +5 V, V_G1S = V_DS = 0
V_G1S(off)
0.6
0.85
1.1
V
V_DS = 5 V, V_G2S = 4 V
I_D = 100 μA
V_G2S(off)
0.6
0.85
1.1
V
V_DS = 5 V, V_G1S = 5 V
I_D = 100 μA
I_D(op)
13
16
19
mA V_DS = 5 V, V_G1 = 5 V
V_G2S = 4 V, R_G = 120 kΩ
|y_fs|
24
29
34
mS V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 120 kΩ, f = 1 kHz
c_iss
1.7
2.1
2.5
pF V_DS = 5 V, V_G1 = 5 V
c_oss
1.0
1.4
1.8
pF VG2S = 4 V, RG = 120 kΩ
c_rss
— 0.027 0.05 pF ^{f = 1 MHz}
PG
25
30
—
dB V_DS = 5 V, V_G1 = 5 V
NF
—
1.0
1.8
dB ^VG2S ^{= 4 V, R}G ^{= 120 kΩ}
f = 200 MHz
PG
17
22
—
dB V_DS = 5 V, V_G1 = 5 V
NF
—
1.75 2.3
dB ^VG2S ^{= 4 V, R}G ^{= 120 kΩ}
f = 900 MHz
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
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