BB504M_11 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Preliminary Datasheet
BB504M
Built in Biasing Circuit MOS FET IC
VHF&UHF RF Amplifier
R07DS0286EJ0800
(Previous: REJ03G0837-0700)
Rev.8.00
Mar 28, 2011
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz
• High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; MPAK-4 (SOT-143Rmod)
Outline
Notes:
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Marking is “DS–”.
2. BB504M is individual type number of RENESAS BBFET.
1. Source
2. Gate1
3. Gate2
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
6
+6
–0
+6
–0
30
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
R07DS0286EJ0800 Rev.8.00
Mar 28, 2011
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