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3SK319 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier | |||
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3SK319
S11 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
â10
â.2
â5
â4
â3
â.4
â2
â.6
â.8 â1
â1.5
Test Condition : VDS = 3.5 V , VG2S = 3 V
ID = 10mA
50 to 1000 MHz (50 MHz step)
S21 Parameter vs. Frequency
90° Scale: 1 / div.
120°
60°
150°
30°
180°
0°
â150°
â30°
â120°
â90°
â60°
Test Condition : VDS = 3.5 V , VG2S = 3 V
ID = 10mA
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90° Scale: 0.002 / div.
120°
60°
150°
30°
180°
0°
â150°
â30°
â120°
â90°
â60°
Test Condition : VDS = 3.5 V , VG2S = 3 V
ID = 10mA
50 to 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
â10
â.2
â5
â4
â3
â.4
â2
â.6
â.8 â1
â1.5
Test Condition : VDS = 3.5 V , VG2S = 3 V
ID = 10mA
50 to 1000 MHz (50 MHz step)
Rev.2.00 Aug 10, 2005 page 5 of 7
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