3SK319 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

3SK319
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs.
Gate1 to Source Voltage
20
V_DS = 3.5 V 2.5 V
16
2.0 V
12
8
1.5 V
4
V_G2S = 1.0 V
0
1
2
3
4
5
Gate1 to Source Voltage V_G1S (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 3.5 V
V_G2S = 3 V
24
18
2.5 V
12
2V
6
1.5 V
1V
0
0.4 0.8 1.2 1.6 2.0
Gate1 to Source Voltage V_G1S (V)
Rev.2.00 Aug 10, 2005 page 3 of 7
Typical Output Characteristics
20
V_G1S = 1.7 V
V_G2S = 3 V
16
1.6 V
1.5 V
12
1.4 V
8
1.3 V
1.2 V
4
1.1 V
1.0 V
0.9 V
0.8 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain Current vs.
Gate2 to Source Voltage
20
V_DS = 3.5 V
2.0 V
16
1.8 V
1.6 V
12
1.4 V
8
1.2 V
4
V_G1S = 1.0 V
0
1
2
3
4
5
Gate2 to Source Voltage V_G2S (V)
Power Gain vs. Drain Current
25
20
15
10
5
V_DS = 3.5 V
V_G2S = 3 V
f = 900 MHz
0
5
10 15 20 25
Drain Current I_D (mA)