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3SK319 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
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3SK319
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VG1S
VG2S
ID
Pch
Tch
Tstg
Ratings
6
±6
±6
20
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V(BR)DSS
6
—
—
V ID = 200 µA, VG1S = VG2S = 0
V(BR)G1SS
±6
—
—
V IG1 = ±10 µA, VG2S = VDS = 0
V(BR)G2SS
±6
—
—
V IG2 = ±10 µA, VG1S = VDS = 0
IG1SS
—
—
±100 nA VG1S = ±5 V, VG2S = VDS = 0
IG2SS
—
VG1S(off)
0.5
VG2S(off)
0.5
—
±100 nA VG2S = ±5 V, VG1S = VDS = 0
0.7
1.0
V VDS = 5 V, VG2S = 3 V, ID = 100 µA
0.7
1.0
V VDS = 5 V, VG1S = 3 V, ID = 100 µA
IDS(op)
0.5
4
10
mA VDS = 3.5 V, VG1S = 1.1 V,
VG2S = 3 V
|yfs|
18
24
32
mS VDS = 3.5 V, VG2S = 3 V
ID = 10 mA , f = 1 kHz
Ciss
1.3
1.6
1.9
pF VDS = 3.5V, VG2S = 3V
Coss
0.9
1.2
1.5 pF ID = 10mA , f = 1MHz
Crss
— 0.019 0.03 pF
PG
18
21
—
dB VDS = 3.5 V, VG2S = 3 V
NF
—
1.4
2.2 dB ID = 10 mA , f = 900 MHz
Rev.2.00 Aug 10, 2005 page 2 of 7
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