3SK319 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

3SK319
Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier
Features
• Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
• Excellent cross modulation characteristics
• Capable low voltage operation; +B= 5V
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
Note: Marking is “YB–”.
2
3
1
4
REJ03G0820-0200
(Previous ADE-208-602)
Rev.2.00
Aug.10.2005
1. Source
2. Gate1
3. Gate2
4. Drain
Rev.2.00 Aug 10, 2005 page 1 of 7