2SK1318 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK1318
Reverse Drain Current vs.
Source to Drain Voltage
20
16
V_GS = 10 V
12
15 V
Pulse Test
8
V_GS = 0, –5 V
4
0
0.5
1
1.5
2
2.5
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0 ^{D = 1}
0.5
0.3 _0.2
0.1
0.1
0.05
0.02
0.03
0.01
1 ^Shot
Pulse
0.01
10 µ
100 µ
T_C = 25°C
θch–c (t) = γ_S (t) • θch–c
θch–c = 3.57°C/W, T_C = 25°C
P_DM
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50 Ω
D.U.T
Vout Monitor
R_L
V_DD
= 30 V
Waveforms
90%
Vin _10%
Vout ^10%
t_{d (on)}
90%
t_r
90%
t_{d (off)}
10%
t_f
Rev.2.00 Sep 07, 2005 page 5 of 6