2SK1318 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK1318
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
12 ₃
S
REJ03G0930-0200
(Previous: ADE-208-1269)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6