2SK1318 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK1318
Static Drain to Source on State
Resistance vs. Temperature
0.25
Pulse Test
0.2
I_D = 20 A
10 A
0.15
0.1
V_GS = 4 V
5A
10 A
5A
V_GS = 10 V
0.05
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
di/dt = 50 A/µs
10
V_GS = 0, Ta = 25°C
Pulse Test
5
0.2 0.5 1 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
200
20
V_DD = 100 V
160
50 V
16
25 V
120
V_DS
V_GS
12
80
8
40
V_DD = 100 V
50 V
4
I_D = 20 A
25 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
100
V_DS = 10 V
50 _{Pulse Test}
25°C
20
Tc = –25°C
10
75°C
5
2
1
0.5 1 2
5 10 20 50
Drain Current I_D (A)
10,000
Typical Capacitance vs.
Drain to Source Voltage
1,000
Ciss
Coss
100
V_GS = 0
f = 1 MHz
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
t_{d (off)}
200
100
V_GS
duty
=_<=110%V, ,VP_DW_{D =.=.}
2 µs
30 V
50
t_f
20
t_r
t_{d (on)}
10
5
0.2 0.5 1 2
5 10 20
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6