2SK1318 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK1318
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
20
10 V 4 V
3V
16
Pulse Test
12
2.5 V
8
4
V_GS = 2.0 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2
I_D = 20 A
1
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10 _µs
10
3
1
OLipmeitrea^D_dtio^C_bny^OiRn^Pp_Dt^eWh_S^ri₍^as_o⁼_n^tA₎^io1rⁿe⁰a^{(mT1Csm=(s12S5}_°^hCo)t)
0.3
Ta = 25°C
0.1
13
10 30
100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
T_C = 25°C
4
75°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
1
0.5 Pulse Test
0.2
0.1
0.05
V_GS = 4 V
10 V
0.02
0.01
0.5 1 2
5 10 20 50
Drain Current I_D (A)