2SC5820 Datasheet, PDF (5/11 Pages) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator

2SC5820
S₁₁ Parameter vs. Frequency
.8 ¹
.6
1.5
2
.4
3
4
.2
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
–10
–.2
–5
–4
–3
–.4
–2
–.6
–.8 _–1
–1.5
Condition: V_CE = 2 V, Z_O = 50 Ω
100 to 3000 MHz (100 MHz Step)
( I_C = 30 mA)
S₁₂ Parameter vs. Frequency
90° ^{Scale: 0.06 / div.}
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Condition: V_CE = 2 V, Z_O = 50 Ω
100 to 3000 MHz (100 MHz Step)
( I_C = 30 mA)
S₂₁ Parameter vs. Frequency
90°
Scale: 8 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Condition: V_CE = 2 V, Z_O = 50 Ω
100 to 3000 MHz (100 MHz Step)
( I_C = 30 mA)
S₂₂ Parameter vs. Frequency
.8 ¹
.6
1.5
2
.4
3
4
.2
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
–10
–.2
–5
–4
–3
–.4
–2
–.6
–.8 _–1
–1.5
Condition: V_CE = 2 V, Z_O = 50 Ω
100 to 3000 MHz (100 MHz Step)
( I_C = 30 mA)
Rev.2.00 Aug 10, 2005 page 5 of 10