2SC5820 Datasheet, PDF(2/11 Page) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator

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2SC5820 Datasheet, PDF (2/11 Pages) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator

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2SC5820

Electrical Characteristics

Item

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Noise figure

3rd. Order Intercept Point

(Ta = 25Â°C)

Symbol Min Typ Max Unit

Test conditions

ICBO

ï£§

ÂµA VCB = 12 V, IE = 0

ICEO

ï£§

ÂµA VCE = 4 V, RBE = â

IEBO

ï£§

ÂµA VEB = 1.5 V, IC = 0

hFE

70 110 150

ï£§ VCE = 2 V, IC = 20 mA

Cob

ï£§

0.3

0.6

pF VCB = 2 V, IE = 0, f = 1 MHz

ï£§

GHz VCE = 2 V, IC = 30 mA

f = 2 GHz

17.5

ï£§

dB VCE = 2 V, IC = 30 mA,

f = 1.8 GHz

ï£§ 1.15 1.7

dB VCE = 2 V, IC = 5 mA,

f = 1.8 GHz

IP3

ï£§

dBm VCE = 2 V, IC = 5 mA,

f = 1.8 GHz

Rev.2.00 Aug 10, 2005 page 2 of 10

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