2SC5820 Datasheet, PDF (4/11 Pages) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator

2SC5820
Reverse Transfer Capacitance vs.
Collector to Base Voltage
1.0
I_E = 0
f = 1 MHz
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
Collector to Base Voltage V_CB (V)
S₂₁ Parameter vs. Collector Current
20
V_CE = 2 V
f = 2 GHz
16
12
8
4
0
12
5 10 20 50 100
Collector Current I_C (mA)
Noise Figure vs. Collector Current
5
f = 1.8 GHz
4
3
2
VV_CCEE
=
=
1
3
V
V
V_CE = 2 V
1
0
12
5 10 20 50 100
Collector Current I_C (mA)
Rev.2.00 Aug 10, 2005 page 4 of 10
Gain Bandwidth Product vs.
Collector Current
30
f= 2 GHz
V_CE = 2 V
20
10
0
12
5 10 20 50 100
Collector Current I_C (mA)
3rd. Order Intercept Point (IP3)
20
f = 1.8 GHz
V_CE = 2 V
Fundamental
0 _{Ic = 5 mA}
-20
3rd. Harmonic
-40
-60
-80
-60 -40 -20
0
20
Input Power P_IN (dBm)
Power Gain vs. Collector Current
20
f = 1.8 GHz
V_CE = 3 V
16
V_CE = 2 V
12
V_CE = 1 V
8
4
0
12
5 10 20 50 100
Collector Current I_C (mA)