2SC5820 Datasheet, PDF (3/11 Pages) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator

2SC5820
Main Characteristics
Collector Power Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
50
V_CE = 2 V
40
30
20
10
0
0.2 0.4 0.6 0.8
1
Base to Emitter Voltage V_BE (V)
Collector Output Capacitance vs.
Collector to Base Voltage
1.0
I_E = 0
f = 1 MHz
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
Collector to Base Voltage V_CB (V)
Rev.2.00 Aug 10, 2005 page 3 of 10
Typical Output Characteristics
500 µA
50
450 µA
400 µA
40
350 µA
300 µA
30
250 µA
200 µA
20
150 µA
100 µA
10
I_B = 50 µA
0
1
2
3
4
Collector to Emitter Voltage V_CE (V)
DC Current Transfer Ratio vs.
Collector Current
200
V_CE = 2 V
150
100
50
0
12
5 10 20 50 100
Collector Current I_C (mA)
Emitter Input Capacitance vs.
Emitter to Base Voltage
2.0
I_C = 0
f = 1 MHz
1.6
1.2
0.8
0.4
0
-1
0
1
Emitter to Base Voltage V_EB (V)