R8C25 Datasheet, PDF (444/525 Pages) Renesas Technology Corp – RENESAS 16-BIT SINGLE-CHIP MCU R8C FAMILY / R8C/2x SERIES

R8C/24 Group, R8C/25 Group
19. Flash Memory
19.7.1.4 How to Access
Write 0 before writing 1 when setting the FMR01, FMR02, or FMR11 bit to 1. Do not generate an interrupt
between writing 0 and 1.
19.7.1.5 Rewriting User ROM Area
In EW0 Mode, if the supply voltage drops while rewriting any block in which a rewrite control program is
stored, it may not be possible to rewrite the flash memory because the rewrite control program cannot be
rewritten correctly. In this case, use standard serial I/O mode.
19.7.1.6 Program
Do not write additions to the already programmed address.
19.7.1.7 Entering Stop Mode or Wait Mode
Do not enter stop mode or wait mode during erase-suspend.
19.7.1.8 Program and Erase Voltage for Flash Memory
To perform programming and erasure, use VCC = 2.7 to 5.5 V as the supply voltage. Do not perform
programming and erasure at less than 2.7 V.
Rev.3.00 Feb 29, 2008 Page 427 of 485
REJ09B0244-0300