RJF0411JPD Datasheet, PDF (4/8 Pages) Renesas Technology Corp – 40V, 34A Silicon N Channel Thermal FET Power Switching

RJF0411JPD
Static Drain to Source on State Resistance
vs. Temperature
70
Pulse Test
60
50
40
I_D = 15 A
5 A, 10 A
30 ^VGS ^{= 5 V}
20
10 V
10
I_D = 5 A, 10 A, 15 A
0
–50 –25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
Body-Drain Diode Reverse
Recovery Time
100
10
diF / dt = 50 A / μs
V_GS = 0, Ta = 25°C
1
1
10
100
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
30
25 V_GS = 5 V
Pulse Test
20
15
0V
10
5
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
Tc = – 40°C
10
25°C
1
0.1
0.1
V_DS = 10 V
Pulse Test
1
10
100
Drain Current I_D (A)
Switching Characteristics
100
V_GS = 10 V, V_DD = 30 V
PW = 300 μs, duty ≤ 1 %
tf
tr
10
td(off)
td(on)
1
0.1
1
10
100
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Coss
30
V_GS = 0
f = 1 MHz
10
0
10
20
30
40
Drain to Source Voltage V_DS (V)
R07DS1258EJ0100 Rev.1.00
Jun 23, 2015
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