RJF0411JPD Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 40V, 34A Silicon N Channel Thermal FET Power Switching

Data Sheet
RJF0411JPD
40V, 34A Silicon N Channel
Thermal FET Power Switching
R07DS1258EJ0100
Rev.1.00
Jun 23, 2015
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
 Logic level operation.
 Built-in the over temperature shut-down circuit.
 High endurance capability against to the short circuit.
 Latch type shut down operation (need 0 voltage recovery).
 Built-in the current limitation circuit.
 Power supply voltage applies 12 V.
 AEC-Q101 Compliant.
 Endurance capability against to ESD.
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
G
1
2
3
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Gate to source voltage
VGSS
Drain current
ID ^Note3
Body-drain diode reverse drain current
IDR
Avalanche current
IAP ^{Note 2}
Avalanche energy
EAR ^{Note 2}
Channel dissipation
Pch ^{Note 1}
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg  50 
3. It provides by the current limitation lower bound value.
Ratings
40
16
–2.5
34
34
5
166
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
R07DS1258EJ0100 Rev.1.00
Jun 23, 2015
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