RJF0411JPD Datasheet, PDF (3/8 Pages) Renesas Technology Corp – 40V, 34A Silicon N Channel Thermal FET Power Switching

RJF0411JPD
Main Characteristics
Power vs. Temperature Derating
50
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
8V 6V
50 _{10 V}
4.5 V
5V
40
4V
30
V_GS = 3.5 V
20
10
Pulse Test
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
800
Pulse Test
700
600
500
I_D = 15 A
400
300
10 A
200
5A
100
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS1258EJ0100 Rev.1.00
Jun 23, 2015
Maximum Safe Operation Area
1000
Ta = 25°C
100
Thermal shut down
Operation area
10
1
0.1
0.01
1 ms
DC Operation
(Tc = 25°C)
Operation in
this area is
limited by R_{DS (on)}
PW = 10 ms
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
30
V_DS = 10 V
Pulse Test
20
10
25°C
Tc = – 40°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
V_GS = 5 V
10 V
10
1
0.1
1
10
100
Drain Current I_D (A)
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