RJF0411JPD Datasheet, PDF (2/8 Pages) Renesas Technology Corp – 40V, 34A Silicon N Channel Thermal FET Power Switching

RJF0411JPD
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Note: 4. Pulse test
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Vop
ID limt
Min
3.5
—
—
—
—
—
—
—
3.5
34
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
A
A
A
mA
mA
C
V
A
(Ta = 25°C)
Test Conditions
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Channel temperature
VGS = 5 V, VDS = 10 V ^{Note 4}
Tc ≤ 80C
Electrical Characteristics
Item
Drain current
Symbol Min Typ Max Unit
ID1
—
—
40
A
ID2
—
—
10
mA
ID3
34
—
—
A
ID4
34
—
—
A
Drain to source breakdown voltage V(BR)DSS 40
—
—
V
Gate to source breakdown voltage V(BR)GSS 16
—
—
V
V(BR)GSS –2.5
—
—
V
Gate to source leak current
IGSS1
—
— 100 A
IGSS2
—
—
50
A
IGSS3
—
—
1
A
IGSS4
—
— –100 A
Input current (shut down)
IGS(OP)1
—
0.8
—
mA
IGS(OP)2
— 0.35
—
mA
Zero gate voltage drain current
IDSS
—
—
10
A
Gate to source cutoff voltage
VGS(off)
1.1
—
2.1
V
Forward transfer admittance
Static drain to source
on state resistance
|yfs|
12 21.9 —
S
RDS(on)
— 29.9 43
m
RDS(on)
— 23.8 37
m
Output capacitance
Coss
— 416 —
pF
Turn-on delay time
td(on)
—
3
—
s
Rise time
tr
— 12.8 —
s
Turn-off delay time
td(off)
—
4
—
s
Fall time
tf
—
9.9
—
s
Body-drain diode forward voltage
Body-drain diode
reverse recovery time
V_DF
— 0.96 —
V
trr
— 109 —
ns
Over load shut down
operation time ^{Note 6}
tos1
— 0.26 —
ms
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
VGS = 3.5 V, VDS = 10 V ^{Note 5}
VGS = 1.2 V, VDS = 10 V
VGS = 5 V, VDS = 10 V ^{Note 5}
Tc ≤ 80C
VGS = 4.5 V, VDS = 10 V ^{Note 5}
Tc ≤ 80C
ID = 10 mA, VGS = 0
IG = 800 A, VDS = 0
IG = –100 A, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 32 V, VGS = 0, Tc = 110C
VDS = 10 V, ID = 1 mA
ID = 15 A, VDS = 10 V ^{Note 5}
ID = 15 A, VGS = 5 V ^{Note 5}
ID = 15 A, VGS = 10 V ^{Note 5}
VDS = 10 V, VGS = 0, f = 1MHz
VGS = 10 V, ID= 15 A, RL = 2 
IF = 30 A, VGS = 0
IF = 30 A, VGS = 0
diF/dt = 50 A/s
VGS = 5 V, VDD = 16 V
R07DS1258EJ0100 Rev.1.00
Jun 23, 2015
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