R1EX25512ASA00I_15 Datasheet, PDF (4/22 Pages) Renesas Technology Corp – Serial Peripheral Interface 512K EEPROM (64-Kword × 8-bit)

R1EX25512ASA00I/R1EX25512ATA00I
Memory cell characteristics
Endurance
Data retention
Notes: 1. Not 100% tested
Ta=25°C
1,000k Cycles min.
100 Years min.
Ta=85°C
100k Cycles min.
10 Years min.
Data at shipment
 Memory array : “ 1 ” (FF Hex)
 Status register SRWD, BP0, BP1: “ 0 ”
(V_CC = 1.8 V to 5.5 V)
Notes
1
1
DC Characteristics
Parameter
Input leakage current
Symbol
Min
I_LI

Output leakage current
I_LO

V_CC current
Standby
I_SB

Active
I_CC1


Output voltage
I_CC2
V_OL1
V_OL2
V_OH1
V_OH2




V_CC × 0.8
V_CC × 0.8
Max
2
2
5
3
5
3
5
0.4
0.4


Unit
µA
µA
µA
mA
mA
mA
mA
V
V
V
V
Test conditions
V_CC = 5.5 V, V_IN = 0 to 5.5 V
(S, D, C, HOLD, W)
V_CC = 5.5 V, V_OUT = 0 to 5.5 V
(Q)
V_IN = V_SS or V_CC, S = V_CC
V_CC = 5.5 V
V_CC = 3.3 V, Read at 5 MHz
V_IN = V_CC × 0.1 / V_CC × 0.9
Q = OPEN
V_CC = 5.5 V, Read at 5 MHz
V_IN = V_CC × 0.1 / V_CC × 0.9
Q = OPEN
V_CC = 3.3 V, Write at 5 MHz
V_IN = V_CC × 0.1 / V_CC × 0.9
V_CC = 5.5 V, Write at 5 MHz
V_IN = V_CC × 0.1 / V_CC × 0.9
V_CC = 2.5 to 5.5 V, I_OL = 2 mA
V_CC = 1.8 to 2.5 V, I_OL = 1.5 mA
V_CC = 2.5 to 5.5 V, I_OH = −2 mA
V_CC = 1.8 to 2.5 V, I_OH= −0.4 mA
R10DS0044EJ0100 Rev.1.00
Oct.04, 2010
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