HAT2256R Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET

HAT2256R
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
V_GS = 4.5 V
20
10 V
10
5
2
1
0.1
1
10
100
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
60
I D = 1 A, 2 A, 5 A
40 V _GS = 4.5 V
20
10 V
1 A, 2 A, 5 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.1
0.01
0.001
0.5
0.2
0.1
0.05
0.02
0.01 _{1shot pulse}
0.0001
10 μ 100 μ 1 m
θch - f(t) = γs (t) x θch - f
θch - f = 100°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PD_M
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (s)
100 1000 10000
R07DS1369EJ0401 Rev.4.01
Jan 20, 2017
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