HAT2256R Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET

HAT2256R
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
60
Gate to source leak current
IGSS
—
Zero gate voltege drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
10
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery
trr
—
time
Notes: 4. Pulse test
Typ
—
—
—
—
24
28
18
1210
160
65
10
2.8
3.2
6.8
5.0
42
3.5
0.83
35
Max
—
± 0.1
1
2.5
30
41
—
—
—
—
—
—
—
—
—
—
—
1.08
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 4 A, VGS = 10 V ^Note4
ID = 4 A, VGS = 4.5 V ^Note4
ID = 4 A, VDS = 10 V ^Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 25 V
VGS = 4.5 V
ID = 8 A
VGS = 10 V, ID = 4 A
VDD  30 V
RL = 7.5 
Rg = 4.7 
IF = 8 A, VGS = 0 ^Note4
IF = 8 A, VGS = 0
diF/ dt = 100 A/ µs
R07DS1369EJ0401 Rev.4.01
Jan 20, 2017
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