HAT2256R Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET

HAT2256R
Silicon N Channel Power MOSFET
Power Switching
Features
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
R_DS(on) = 24 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
Data Sheet
R07DS1369EJ0401
Rev.4.01
Jan 20, 2017
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
8
ID(pulse)Note1
64
Body-drain diode reverse drain current
IDR
8
Avalanche current
IAP ^{Note 2}
8
Avalanche energy
EAR ^{Note 2}
5.4
Channel dissipation
Pch ^Note3
2.0
Channel to Ambient Thermal Impedance
ch-a ^Note3
62.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
C
C
R07DS1369EJ0401 Rev.4.01
Jan 20, 2017
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