HAT2256R Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET

HAT2256R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
500
100
10 _μs
10
1
D_{C Ope}^P_raW_tio=n
Operation in
this area is
1 _ms
10 _ms
(P_{W <}
100
1^N₀^ot_s^e_{) 5}
μ_s
0.1 ^{limited by RDS(on)}
Ta = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
10
10 V
3.0 V
8
2.5 V
Pulse Test
6
2.3 V
4
2
V_GS = 2.1 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
6
Tc = 75°C
4
2
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
R07DS1369EJ0401 Rev.4.01
Jan 20, 2017
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