HAT2217C_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2217C
Static Drain to Source On State Resistance
vs. Temperature
500
400
300
200
100
0
−25
I_D = 0.5,1.5 A
3A
V_GS = 10V
3A
4.5V
0.5,1.5 A
Pulse Test
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
80
16
I_D = 3 A
V_DD = 10 V
60
25 V
50 V
12
VDD
40
VGS
8
V_DD = 50 V
25 V
20
10 V
4
0
0
2
4
6
8
10
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
10
8
10 V
6
V_GS = 0 , -10 V
4
2
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = −25°C
10
25°C
3
75°C
1
0.3
V_DS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
1000
300
Ciss
100
30
Coss
10
Crss
3
1
0 10 20 30 40 50 60
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
tr
100
td(off)
td(on)
10
tf
1
0.01 0.03 0.1 0.3 1 3 10
Drain Current I_D (A)
R07DS1183EJ0400 Rev.4.00
Mar 19, 2014
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