HAT2217C_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2217C
Main Characteristics
Power vs. Temperature Derating
1.6
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
5 V ^{10 V}
Pulse Test
4V
8
3.5 V
6
3V
4
2
2.5 V
V_GS = 2 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
800
Pulse Test
600
400
I_D = 3 A
200
1.5 A
0.5 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
100
Ta = 25°C,1shot pulse
30 100 μs
When using the FR4 board.
10 μs
10
3
1
0.3
0.1
0.03
PW _{= 10}1_mmss
Operation in this
area is limited by
R_DS(on)
0.01 0.03 0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 10 V
−25°C
Pulse Test
25°C
8
6
Tc = 75 °C
4
2
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
1000
vs. Drain Current
Pulse Test
-4.5V
100
V_GS = 10 V
10
0.1
1
10
100
Drain Current I_D (A)
R07DS1183EJ0400 Rev.4.00
Mar 19, 2014
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