HAT2217C_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2217C
Silicon N Channel MOS FET
Power Switching
Features
• Low on-resistance
R_DS(on) = 105 mΩ typ. (at V_GS = 4.5 V)
• Low drive current.
• High density mounting
• 4.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
234 5
DDD D
Index
band
5
4
6
6
G
3
2
1
S
1
Data Sheet
R07DS1183EJ0400
(Previous: REJ03G0449-0300)
Rev.4.00
Mar 19, 2014
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
V_DSS
60
Gate to Source voltage
V_GSS
+20 / –10
Drain current
Drain peak current
I_D
3
I_{D(pulse)Note1}
12
Body - Drain diode reverse Drain current
Channel dissipation
I_DR
Pch^{Note 2}
3
1.25
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), PW ≤ 5 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS1183EJ0400 Rev.4.00
Mar 19, 2014
Page 1 of 6