HAT2217C_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2217C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
60
Gate to source breakdown voltage V_(BR)GSS +20
–10
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(th)
1
Static drain to source on state
resistance
R_DS(on)
—
R_DS(on)
—
Forward transfer admittance
| y_fs |
2.8
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Notes: 3. Pulse test
Typ
—
—
—
—
—
105
126
4.3
275
40
16
4.5
0.8
0.7
5
11
35
3
0.85
Max
—
—
±10
1
2
132
183
—
—
—
—
—
—
—
—
—
—
—
1.25
Unit
V
V
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 μA, V_DS = 0
V_GS = 16 / –8 V, V_DS = 0
V_DS = 60 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V ^Note3
I_D = 1.5 A, V_GS = 10 V ^Note3
I_D = 1.5 A, V_GS = 4.5 V ^Note3
I_D = 1.5 A, V_GS = 10 V ^Note3
V_GS = 0
f = 1 MHz
V_DS = 10 V
V_GS = 10 V
V_DS = 10 V
I_D = 3 A
V_GS = 10 V
I_D = 1.5 A
V_DD = 10 V
R_L = 6.6 Ω , R_g = 4.7 Ω
I_F = 3 A, V_GS = 0
R07DS1183EJ0400 Rev.4.00
Mar 19, 2014
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