HAT2197R_16 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2197R
Static Drain to Source on State Resistance
vs. Temperature
12
Pulse Test
10
I D = 20 A
8
V _GS = 4.5 V
5, 10 A
6
5 A, 10 A, 20 A
10 V
4
2
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body–Drain Diode Reverse
Recovery Time
100
50
20
di/dt = 100 A/µs
10
0.1
V_GS = 0, Ta = 25°C
1
10
100
Reverse Drain Current I _DR (A)
Dynamic Input Characteristics
50
20
I _D = 16 A
40
V _DD = 25 V
10 V
5V
30
16
V_GS
12
20 ^VDS
8
10
V _DD = 25 V
4
10 V
5V
0
0
16 32 48 64 80
Gate Charge Qg (nC)
1000
Forward Transfer Admittance vs.
Drain Current
Tc = –25°C
100
10
25°C
1
75°C
V _DS = 10 V
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I _D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
Ciss
1000
300
Coss
100
Crss
30
VGS = 0
f = 1 MHz
10
0 5 10 15 20 25 30
Drain to Source Voltage V _DS (V)
1000
Switching Characteristics
V_GS = 10 V , V_DS = 10 V
Rg = 4.7 Ω, duty < 1 %
100
tr
t _d(off)
10
1
0.1
t _d(on)
tf
1
10
100
Drain Current I _D (A)
Rev.2.01, Nov.30.2016, page 4 of 7