HAT2197R_16 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2197R
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
10 V
Pulse Test
2.8 V
16
2.6 V
12
2.5 V
8
V_GS = 2.4 V
4
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
160
120
I D = 20 A
80
10 A
40
5A
0
4
8
12 16 20
Gate to Source Voltage V _GS (V)
Maximum Safe Operation Area
500
10 µs
100
10
1
100
Opera^DCtio^On^pein^{ratPioWn (=PW10<1m1N0msotsse})⁴
µ_s
this area is
0.1 ^{limited by R DS(on)}
Ta = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
20
V _DS = 10 V
Pulse Test
16
12
Tc = 75°C
8
4
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
V_GS = 4.5 V
10
5
10 V
2
1
1
10
100
1000
Drain Current I _D (A)
Rev.2.01, Nov.30.2016, page 3 of 7