HAT2197R_16 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2197R
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 5.3 mΩ typ. (at V_GS = 10 V)
Outline
SOP-8
8 ^{7 65}
56 7 8
DD D D
1 ²³⁴
REJ03G0061-0201Z
Rev.2.01
Nov.30.2016
4
G
SSS
12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Rev.2.01, Nov.30.2016, page 1 of 7