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HAT2197R_16 Datasheet, PDF (2/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching
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HAT2197R
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse)Note1
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note 2
EAR Note 2
Pch Note3
Channel to ambient thermal impedance θch-a Note3
30
±20
16
128
16
16
25.6
2.5
50
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 30
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
IGSS
—
IDSS
—
VGS(off) 1.0
RDS(on) —
RDS(on) —
|yfs|
22
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd —
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse
trr
—
recovery time
Notes: 4. Pulse test
(Ta = 25°C)
Typ Max Unit Test Conditions
—
—
V
ID = 10 mA, VGS = 0
—
± 0.1 µA
—
1
µA
—
2.5 V
5.3 6.7 mΩ
6.8 9.9 mΩ
38
—
S
2650 —
pF
610 —
pF
190 —
pF
1.2 —
Ω
18
—
nC
7.5 —
nC
4.2 —
nC
10
—
ns
25
—
ns
45
—
ns
4.2 —
ns
0.80 1.04 V
30
—
ns
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 8 A, VGS = 10 V Note4
ID = 8 A, VGS = 4.5 V Note4
ID = 8 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 16 A
VGS = 10 V, ID = 8 A
VDD ≅ 10 V
RL = 1.25 Ω
Rg = 4.7 Ω
IF = 16 A, VGS = 0 Note4
IF = 16 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.2.01, Nov.30.2016, page 2 of 7
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