HAT2174N Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2174N
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
60
I_D = 10 A
5 A, 2 A
40
V_GS = 8 V
20
10 V
0
-25 0 25
2 A, 5 A, 10 A
50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
0.1 0.3
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
250
I_D = 20 A
200
V_DD = 25 V
50 V
100 V
20
V_GS
16
150
12
V_DD = 100 V
100
8
50 V
50
V_DS
25 V
0
16 32 48
4
0
64 80
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = -25°C
10
75°C
25°C
3
1
0.3
0.1
0.1
V_DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
Ciss
1000
300
Coss
100
Crss
30
V_GS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1000
300
Switching Characteristics
V_GS = 10 V, V_DD = 30 V
Rg = 4.7 Ω, duty ≤ 1 %
100
td(off)
30
10 ^td(on)
tf
3 ^tr
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I_D (A)
REJ03G1685-0200 Rev.2.00 May 28, 2008
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