HAT2174N Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2174N
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 8 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 21.3 mΩ typ. (at V_GS = 10 V)
Outline
RENESAS Package code: PTSP0008DC-A
(Package name: LFPAK-i)
1(S)
2(S)
3(S)
8(D)
4(G)
7(D)
4
6(D)
G
5(D)
5678
DDDD
SSS
12 3
REJ03G1685-0200
Rev.2.00
May 28, 2008
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
θch-C
Tch
Tstg
Ratings
100
±20
20
80
20
20
40
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1685-0200 Rev.2.00 May 28, 2008
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