HAT2174N Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2174N
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
20
V_GS =10 V Pulse Test
8V
16
5.8 V
12
5.6 V
8
5.4 V
4
5.0 V 5.2 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
I_D = 10 A
200
5A
100
2A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
REJ03G1685-0200 Rev.2.00 May 28, 2008
Page 3 of 7
Maximum Safe Operation Area
500
100
10
DC^P_O^W_pe=_ra1ti¹_o0n^{mm1ss00 µs 10 µs}
1 Operation in
this area is
limited by R_DS(on)
0.1
Tc = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100 500
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
16 ^{Pulse Test}
12
8
Tc = 75°C
4
25°C
-25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
V_GS = 8 V
20
10 V
10
5
2
1
12
5
10 20
50 100
Drain Current I_D (A)