|
HAT2174N Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching | |||
|
◁ |
HAT2174N
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 100
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
IGSS
â
Zero gate voltage drain current
IDSS
â
Gate to source cutoff voltage
VGS(off)
4.0
Static drain to source on state
RDS(on)
â
resistance
RDS(on)
â
Forward transfer admittance
|yfs|
21
Input capacitance
Ciss
â
Output capacitance
Coss
â
Reverse transfer capacitance
Crss
â
Gate resistance
Rg
â
Total gate charge
Qg
â
Gate to source charge
Qgs
â
Gate to drain charge
Qgd
â
Turn-on delay time
td(on)
â
Rise time
tr
â
Turn-off delay time
td(off)
â
Fall time
tf
â
Bodyâdrain diode forward voltage
VDF
â
Bodyâdrain diode reverse recovery
trr
â
time
Notes: 4. Pulse test
Typ
â
â
â
â
â
21.3
22.3
35
2280
285
100
0.5
33.5
12.4
8.4
18
13
31
5.5
0.84
50
Max
â
â
±10
1
6.0
27.3
30.3
â
â
â
â
â
â
â
â
â
â
â
â
1.10
â
Unit
V
V
µA
µA
V
mâ¦
mâ¦
S
pF
pF
pF
â¦
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
VDS = 10 V, ID = 20mA
ID = 10 A, VGS = 10 V Note4
ID = 10 A, VGS = 8 V Note4
ID = 10 A, VDS = 10 V Note4
VDS = 10 V,VGS = 0,
f = 1 MHz
VDD = 50 V, VGS = 10 V,
ID = 20 A
VGS = 10 V, ID = 10 A,
VDD â
30 V, RL = 3 â¦,
Rg = 4.7 â¦
IF = 20 A, VGS = 0 Note4
IF = 20 A, VGS = 0
diF/ dt = 100 A/ µs
REJ03G1685-0200 Rev.2.00 May 28, 2008
Page 2 of 7
|
▷ |