HAT2026R Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2026R
Static Drain to Source on State Resistance
vs. Temperature
0.05
Pulse Test
0.04
0.03
0.02
V_GS = 2.5 V
2 A, 5 A
I_D = 10 A
0.01
4V
0
–40 0
2 A, 5 A, 10 A
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.2
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
0.5 1 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 11 A
40
V_DD = 5 V
16
10 V
30
20 V
V_GS
12
20 ^VDS
8
10
V_DD = 20 V
4
10 V
5V
0
0
0
20
40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
50
Tc = –25°C
20
75°C
10
25°C
5
2
1
0.5 1 2
V_DS = 10 V
Pulse Test
5 10 20 50
Drain Current I_D (A)
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
Ciss
1000
Coss
500
Crss
200 _{VGS = 0}
f = 1 MHz
100
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
1000
500
200
100
50
Switching Characteristics
td(on)
tf
tr
td(off)
20
10
0.2
V_GS = 4 V, V_DD = 10 V
PW = 3 µs, duty ≤ 1 %
0.5 1 2
5 10 20
Drain Current I_D (A)
Rev.5.00 Sep 07, 2005 page 4 of 6