HAT2026R Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2026R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
87 ⁶⁵
4
G
1234
5678
DDDD
SSS
123
REJ03G1161-0500
(Previous: ADE-208-523C)
Rev.5.00
Sep 07, 2005
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
Rev.5.00 Sep 07, 2005 page 1 of 6