HAT2026R Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2026R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10 V
50
5V
4V
Pulse Test
40
3V
2.5 V
30
2V
20
10
V_GS = 1.5 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
0.12
I_D = 10 A
0.08
5A
0.04
2A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.5.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
1
0.3
DC _Operation
Operation in
PW
(PW
this area is
limited by R_{DS (on)}
=
≤
1 _ms
10 _ms
10^N_s^ot₎^e 4
0.1
10 µs
100 µs
0.03 Ta = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Note 4:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
75°C
10
Tc = –25°C
25°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
0.1
0.05
0.02
0.01
0.005
V_GS = 2.5 V
4V
0.002
0.5 1 2
5 10 20 50
Drain Current I_D (A)