HAT2026R Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2026R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
Gate to source voltage
VDSS
20
VGSS
±12
Drain current
Drain peak current
ID
11
ID (pulse) ^{Note 1}
88
Body-drain diode reverse drain current
IDR
11
Channel dissipation
Pch ^{Note 2}
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min
20
±12
—
—
0.4
—
—
18
—
—
—
—
—
—
—
—
—
Note: 3. Pulse test
The specifications may be change without notice.
Typ
—
—
—
—
—
0.011
0.014
27
1760
1130
450
35
275
300
340
0.83
75
Max
—
—
±10
1
1.4
0.015
0.021
—
—
—
—
—
—
—
—
1.08
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±10 V, VDS = 0
VDS = 20 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 6 A, VGS = 4 V ^{Note 3}
ID = 6 A, VGS = 2.5 V ^{Note 3}
ID = 6 A, VDS = 10 V ^{Note 3}
VDS = 10 V
VGS = 0
f = 1 MHz
VGS = 4 V, ID = 6 A,
VDD ≅ 10 V
IF = 11 A, VGS = 0 ^{Note 3}
IF = 11 A, VGS = 0
diF/dt = 20 A/µs
Rev.5.00 Sep 07, 2005 page 2 of 6