HAT2016R Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2016R
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
I_D = 1 A, 2 A, 5 A
0.06
V_GS = 4 V
0.04
0.02
10 V
1 A, 2 A, 5 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.2
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
0.5 1 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 6.5 A
40
V_DD = 5 V
16
10 V
25 V
30 _VDS
12
V_GS
20
8
10
V_DD = 25 V
4
10 V
5V
0
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25°C
5
75°C
2
25°C
1
0.5
0.2
0.2
V_DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I_D (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0
10 20
30 40
50
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
5V
V_GS = 0, –5 V
8
4
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Rev.10.00 Sep 07, 2005 page 4 of 7