HAT2016R Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2016R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
10 V
6V
16
5V
12
4.5 V
4V
Pulse Test
3.5 V
8
3V
4
V_GS = 2.5 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
I_D = 5 A
0.1
2A
1A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.10.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
100
10 µs
30
10
3
1
0.3
0.1
DC
Operation
PW
Operation
in
=
(PW
this area is
limited by R_{DS (on)}
110m0s^µs
10 _ms
≤ ₁₀^N_s^ot₎e ₅
Ta = 25°C
0.03 1 shot Pulse
1 Drive Operation
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Note 5:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
20
Tc = –25°C
16
25°C
75°C
12
8
4
V_DS = 10 V
Pulse Test
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
V_GS = 4 V
10 V
0.02
0.01
0.005
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)