HAT2016R Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2016R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
Gate to source voltage
VDSS
30
VGSS
±20
Drain current
Drain peak current
ID
6.5
ID (pulse) ^{Note 1}
52
Body-drain diode reverse drain current
IDR
6.5
Channel dissipation
Pch ^{Note 2}
2
Channel dissipation
Pch ^{Note 3}
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 4. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSS
30
—
—
V ID = 10 mA, VGS = 0
V (BR) GSS ±20
—
—
V IG = ±100 µA, VDS = 0
IGSS
—
—
±10
µA VGS = ±16 V, VDS = 0
IDSS
—
—
10
µA VDS = 30 V, VGS = 0
VGS (off)
RDS (on)
RDS (on)
|yfs|
1.0
— 2.0
V VDS = 10 V, ID = 1 mA
—
0.03 0.045
Ω
ID = 4 A, VGS = 10 V ^{Note 4}
—
0.05 0.08
Ω
ID = 4 A, VGS = 4 V ^{Note 4}
5
8
—
S
ID = 4 A, VDS = 10 V ^{Note 4}
Ciss
— 560 —
pF VDS = 10 V
Coss
— 380 —
pF VGS = 0
Crss
— 170 —
pF f = 1 MHz
td (on)
tr
td (off)
tf
VDF
trr
—
30
—
— 270 —
ns VGS = 4 V, ID = 4 A,
ns VDD ≅ 10 V
—
40
—
ns
—
65
—
ns
—
0.9 1.4
V
IF = 6.5 A, VGS = 0 ^{Note 4}
—
45
—
ns IF = 6.5 A, VGS = 0
diF/dt = 20 A/µs
Rev.10.00 Sep 07, 2005 page 2 of 7