HAT2016R Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2016R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
78
DD
56
DD
87 ⁶⁵
1 ²³⁴
2
4
G
G
S1
MOS1
S3
MOS2
REJ03G1156-1000
(Previous: ADE-208-438H)
Rev.10.00
Sep 07, 2005
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Rev.10.00 Sep 07, 2005 page 1 of 7