HAT1111C_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1111C
Static Drain to Source On State Resistance
1000
vs. Temperature
800
I_D = -0.5,-1 A
600
-2 A ^{-2 A}
400 -4.5V
-0.5,-1 A
200
V_GS = -10V
0
Pulse Test
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
0
0
V_DD = -50 V
-25 V
-10 V
-20
-4
V_DD = -10 V
-25 V
-40
-50 V _-8
VDD
-60
I_D = -2 A
-80
0
2
4
Gate Charge
VGS
6
8
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
-10
-12
-16
10
-8
-10 V
-6
V_GS = 0 , 10 V
-4
-2
Pulse Test
0
-0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
30
10
Tc = −25°C
25°C
3
75°C
1
0.3
0.1
-0.1
V_DS = -10 V
Pulse Test
-0.3 -1 -3 -10 -30 -100
Drain Current I_D (A)
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
1000
300
Ciss
100
30
Coss
10
Crss
3
1
0 -10 -20 -30 -40 -50 -60
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
tr
100
td(off)
td(on)
10
tf
1
-0.01 -0.03 -0.1 -0.3 -1 -3 -10
Drain Current I_D (A)
R07DS1177EJ0700 Rev.7.00
Mar 19, 2014
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