HAT1111C_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1111C
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
R_DS(on) = 245 mΩ typ. (at V_GS = –10 V)
• Low drive current.
• 4.5 V gate drive devices.
• High density mounting
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
234 5
DDD D
Index
band
65
4
6
G
3
2
1
S
1
Data Sheet
R07DS1177EJ0700
(Previous: REJ03G0446-0600)
Rev.7.00
Mar 19, 2014
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
Pch^{Note 2}
–60
–20 / +10
–2
–8
–2
1.25
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), PW ≤ 5 s, Ta = 25°C
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS1177EJ0700 Rev.7.00
Mar 19, 2014
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