HAT1111C_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1111C
Main Characteristics
Power vs. Temperature Derating
1.6
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
-10
-10 V
-4.5 V Pulse Test
-8
-4 V
-6
-3.5 V
-4
-3 V
-2
-2.5 V
V_GS = -2 V
0
-2
-4
-6
-8 -10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-800
Pulse Test
-600
-400
I_D = -2 A
-1 A
-200
-0.5 A
0
-4 -8 -12 -16 -20
Gate to Source Voltage V_GS (V)
-100
-30
-10
Maximum Safe Operation Area
Ta = 25°C,1shot pulse
100 μs
When using the FR4 board.
10 μs
-3
-1
-0.3
-0.1
-0.03
Operation in this
area is limited by
R_DS(on)
PW
=
10
1 _ms
ms
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 -30 -100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
-10
V_DS = -10 V
Pulse Test
-8
25°C
Tc = 75°C
-6
−25°C
-4
-2
0
-2
-4
-6
-8 -10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
1000
vs. Drain Current
-4.5V
V_GS = 10 V
100
10
-0.01
Pulse Test
-0.1
-1
-10
Drain Current I_D (A)
R07DS1177EJ0700 Rev.7.00
Mar 19, 2014
Page 3 of 6